Modulation of the resonant Rayleigh light scattering spectrum of GaAs/AlGaAs structures with quantum wells under above-barrier illumination

It is found that additional illumination by photons with energies above the band gap width in barrier layers leads to a strong (up to 40% in depth at the values of the illumination power used in this work) modulation of the light intensity elastically scattered upon resonant excitation of exciton states in quantum wells of GaAs/AlGaAs structures. Evidently, the effect observed is associated with the redistribution of oscillator strengths of exciton transitions due to the formation of three-particle exciton complexes (trions). These complexes arise through preferred capture of nonequilibrium like charge carriers (in our case, holes).