Magnetoresistance of single-layer graphene under the conditions of short-range potential scattering

The magnetoresistance of single-layer graphene on a Si/SiO$_2$ substrate is measured in the temperature range of $2.5$–$150$ K. It is found that, at high enough temperatures and away from the Dirac point, the resistance varies as the square root of the magnetic field. This agrees with a recent theoretical calculation of the magnetoresistance for the case of charge-carrier scattering by defects characterized by a short-range potential.