RUS  ENG
Full version
JOURNALS // Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki // Archive

Pis'ma v Zh. Èksper. Teoret. Fiz., 2012 Volume 96, Issue 9, Pages 646–650 (Mi jetpl3272)

This article is cited in 3 papers

CONDENSED MATTER

Zero-bias tunneling anomaly in a two-dimensional electron system with disorder

I. N. Kotel’nikova, S. E. Dizhura, E. N. Morozovaa, È. V. Devyatovb, V. T. Dolgopolovb

a Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
b Institute of Solid State Physics, Russian Academy of Sciences

Abstract: The temperature dependence of a zero-bias anomaly in the tunneling conductance of an Al/$\delta$-GaAs tunneling structure with a two-dimensional electron density in the $\delta$-layer of $3.5 \times 10^{12}$ cm$^{-2}$ has been investigated. It has been shown that the respective drop $\Delta\rho(\varepsilon,T)$ in the tunneling density of states $\rho$ near the Fermi level $E_{\mathrm F}$ of the two-dimensional electron system depends logarithmically on the energy $\varepsilon$ within the range of $2.7kT<|\varepsilon|<\hbar/\tau$, where $\varepsilon$ is measured with respect to $E_{\mathrm F}$ and $\tau$ is the momentum relaxation time of two-dimensional electrons. It has been found that the drop depth $\Delta\rho(0,T)/\rho$ is also proportional to $\ln(kT/\varepsilon_{0})$ in the temperature range $T = 0.1$$20$ K and saturates below $0.1$ K.

Received: 20.09.2012


 English version:
Journal of Experimental and Theoretical Physics Letters, 2012, 96:9, 577–581

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024