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JOURNALS // Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki // Archive

Pis'ma v Zh. Èksper. Teoret. Fiz., 2013 Volume 97, Issue 10, Pages 660–664 (Mi jetpl3425)

This article is cited in 4 papers

CONDENSED MATTER

Spin relaxation in GaAs/AlGaAs quantum wells in the vicinity of odd filling factors

A. V. Shchepetil'nikovab, Yu. A. Nefedova, I. V. Kukushkina

a Institute of Solid State Physics, Russian Academy of Sciences
b Moscow Institute of Physics and Technology

Abstract: Electron spin resonance in GaAs/AlGaAs quantum wells in the vicinity of odd filling factors $\nu=3,$, 5, and 7 is investigated. The spin relaxation time of two-dimensional electrons is determined from the width of the microwave resonance absorption line. Dependences of the spin relaxation time on the filling factor, temperature, and orientation of the magnetic field are investigated. The spin relaxation time decreases noticeably upon deviation from odd filling factors, and its maximum value depends on the angle between the magnetic field and the plane of the two-dimensional electron gas.

Received: 02.04.2013

DOI: 10.7868/S0370274X13100044


 English version:
Journal of Experimental and Theoretical Physics Letters, 2013, 97:10, 574–578

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