RUS  ENG
Full version
JOURNALS // Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki // Archive

Pis'ma v Zh. Èksper. Teoret. Fiz., 2013 Volume 98, Issue 4, Pages 242–246 (Mi jetpl3498)

This article is cited in 14 papers

CONDENSED MATTER

Orbital quantization in a system of edge Dirac fermions in nanoperforated graphene

Yu. I. Latysheva, A. P. Orlova, A. V. Frolovab, V. A. Volkovba, I. V. Zagorodneva, V. A. Skuratovc, Yu. V. Petrovd, O. F. Vyvenkod, D. Yu. Ivanove, M. Konczykowskif, P. Monceaug

a Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow
b Moscow Institute of Physics and Technology
c Joint Institute for Nuclear Research, Flerov Laboratory of Nuclear Reactions
d Interdisciplinary Resource Center for Nanotechnologies, St. Petersburg State University
e Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences
f École Polytechnique
g Institut NÉEL, CNRS and Université Joseph Fourier

Abstract: The dependence of the electric resistance $R$ of nanoperforated graphene samples on the position of the Fermi level $E_{\text{F}}$, which is varied by the gate voltage $V_g$, has been studied. Nanoperforation has been performed by irradiating graphene samples on a $\mathrm{Si}/\mathrm{SiO}_2$ substrate by heavy (xenon) or light (helium) ions. A series of regular peaks have been revealed on the $R(V_g)$ dependence at low temperatures in zero magnetic field. These peaks are attributed to the passage of $E_{\text{F}}$ through an equidistant set of levels formed by orbitally quantized states of edge Dirac fermions rotating around each nanohole. The results are in agreement with the theory of edge states for massless Dirac fermions.

Received: 10.07.2013

DOI: 10.7868/S0370274X13160066


 English version:
Journal of Experimental and Theoretical Physics Letters, 2013, 98:4, 214–218

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024