B. A. Aronzon, A. S. Lagutin, V. V. Ryl'kov, V. V. Tugushev, V. N. Men'shov, A. V. Lashkul, R. Laiho, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, “Magnetic properties of $\mathrm{GaAs}/\delta\langle\mathrm{Mn}\rangle/\mathrm{GaAs}/\mathrm{In}_x\mathrm{Ga}_{1-x}\mathrm{As}/\mathrm{GaAs}$ quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2008, Volume 87, Issue 3,Pages <nobr>192

This article is cited in 19 papers

CONDENSED MATTER

Magnetic properties of $\mathrm{GaAs}/\delta\langle\mathrm{Mn}\rangle/\mathrm{GaAs}/\mathrm{In}_x\mathrm{Ga}_{1-x}\mathrm{As}/\mathrm{GaAs}$ quantum wells

B. A. Aronzon^ab, A. S. Lagutin^a, V. V. Ryl'kov^ab, V. V. Tugushev^a, V. N. Men'shov^a, A. V. Lashkul^c, R. Laiho^c, O. V. Vikhrova^d, Yu. A. Danilov^d, B. N. Zvonkov^d

^a Russian Research Centre Kurchatov Institute, pl. Akademika Kurchatova 1, Moscow, 123182, Russia
^b Institute for Theoretical and Applied Electrodynamics, Russian Academy of Sciences, Izhorskaya ul. 13/19, Moscow, 127412, Russia
^c Wihuri Physical laboratory, Department of Physics, University of Turku, FIN-20014, Turku, Finland
^d Research Physicotechnical Institute, Nizhni Novgorod State University, Nizhni Novgorod, 603950, Russia

Abstract: The field and temperature dependences of the magnetization of $\mathrm{GaAs}/\delta\langle\mathrm{Mn}\rangle/\mathrm{GaAs/In}_x\mathrm{Ga}_{1-x}\mathrm{As/GaAs}$ quantum wells with the $\delta\langle\mathrm{Mn}\rangle$ layer separated from the well by a 3-nm $\mathrm{GaAs}$ spacer have been studied in the temperature range of 3–300 K in a magnetic field up to 6 T. An external magnetic-field-induced phase transition to a ferromagnetic state with a magnetization hysteresis loop shifted from a zero magnetic field has been found to occur at a temperature below 40 K. A theoretical model is proposed that implies the coexistence of ferromagnetically and antiferromagnetically ordered regions within the $\mathrm{GaAs}$ layers.

PACS: 71.55.Eq, 72.20.My, 72.25.Dc, 75.50.Pp

Received: 26.12.2007