V. S. Krivobok, S. N. Nikolaev, V. S. Bagaev, V. S. Lebedev, E. E. Onishchenko, “Superradiance of a degenerate exciton gas in semiconductors with indirect fundamental absorption edge”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2014, Volume 100, Issue 5,Pages <nobr>343

This article is cited in 3 papers

FIELDS, PARTICLES, AND NUCLEI

Superradiance of a degenerate exciton gas in semiconductors with indirect fundamental absorption edge

V. S. Krivobok^a, S. N. Nikolaev^a, V. S. Bagaev^a, V. S. Lebedev^ab, E. E. Onishchenko^a

^a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^b Moscow Institute of Physics and Technology

Abstract: It is predicted that superradiant states can be formed in a degenerate exciton gas in a semiconductor with an indirect fundamental absorption edge. The superradiance results from four-particle recombination processes and occurs at photon energies approximately twice as high as the band gap energy. Experimental results supporting the possibility of the observation of superradiance from SiGe/Si quantum wells are presented.

Received: 23.07.2014

DOI: 10.7868/S0370274X14170044