Anisotropy of magnetic transport and self-organization of corrugated heterointerfaces in selectively doped structures on GaAs(100) substrates

The anisotropy of the longitudinal magnetoresistance has been found for a two-dimensional electron gas with a high mobility and concentration in GaAs quantum wells grown by molecular beam epitaxy on GaAs(100) substrates. The experimental data obtained are explained by the self-organization of spatially modulated heterointerfaces and are in agreement with the results of studying growth surfaces by atomic force microscopy.