V. V. Uglov, V. M. Anishchik, V. V. Astashinskii, V. M. Astashynski, S. I. Ananin, V. V. Askerko, E. A. Kostyukevich, A. M. Kuzmitski, N. T. Kvasov, A. L. Danilyuk, “Formation of submicron cylindrical structures at silicon surface exposed to a compression plasma flow”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2001, Volume 74, Issue 4,Pages <nobr>234

This article is cited in 22 papers

CONDENSED MATTER

Formation of submicron cylindrical structures at silicon surface exposed to a compression plasma flow

V. V. Uglov^a, V. M. Anishchik^a, V. V. Astashinskii^a, V. M. Astashynski^b, S. I. Ananin^b, V. V. Askerko^b, E. A. Kostyukevich^b, A. M. Kuzmitski^b, N. T. Kvasov^c, A. L. Danilyuk^c

^a Belarusian State University, Minsk
^b Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus
^c Belarussian State University of Computer Science and Radioelectronic Engineering

Abstract: Submicron-sized cylindrical structures were obtained at the surface of silicon single crystal exposed to a compression plasma flow. A periodic structure formed by channels oriented normally to the surface was observed inside the modified surface layer. The period of the structure corresponded to the spacing of the surface formations.

PACS: 52.40.Hf, 68.35.Bs, 79.20.Rf

Received: 16.07.2001