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JOURNALS // Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki // Archive

Pis'ma v Zh. Èksper. Teoret. Fiz., 2001 Volume 73, Issue 6, Pages 336–340 (Mi jetpl4346)

This article is cited in 1 paper

CONDENSED MATTER

Raman $E$ , $E_1+\Delta_1$ resonance in unstrained germanium quantum dots

A. B. Talochkin, S. P. Suprun, A. V. Efanov, I. G. Kozhemyako, V. N. Shumskii

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: Raman scattering by optical phonons in unstrained Ge quantum dots obtained in GaAs/ZnSe/Ge/ZnSe structures was studied using molecular beam epitaxy. A shift in the $E$ , $E_1+\Delta_1$ resonance energy due to the quantization of the spectrum of electron and hole states in quantum dots was observed. The properties observed were explained with the use of a simplest model of localization with allowance for the spectrum of Ge electron states.

PACS: 72.15.Rn

Received: 12.02.2001


 English version:
Journal of Experimental and Theoretical Physics Letters, 2001, 73:6, 297–300

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