Boron implanted in silicon: Segregation at angular configurations of the silicon/silicon dioxide oxidation boundary

Based on computer simulation of the physicochemical segregation processes involving dopants implanted into a host material (silicon), the details of boron injection were investigated for four types of angular configurations (direct and inverse kinks and cavities of the «trench» and «square» types) of the «silicon/silicon dioxide» oxidation boundary. A complicated picture of the B distribution inside the Si and SiO$_2$ regions and at the SiO$_2$/Si front was obtained and analyzed in general terms.