Elastic state of stress in narrow-gap semiconductors: A fundamental possibility to increase the quantum yield of infrared radiation

In a narrow-gap semiconductor with a direct band gap, an elastic state of stress provides the possibility to considerably reduce the collisional interband recombination because of the transformation of the valence band. As a result, the quantum yield of infrared radiation in the interband transition region increases drastically. The experimental results are obtained for InSb crystals.