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JOURNALS // Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki // Archive

Pis'ma v Zh. Èksper. Teoret. Fiz., 2014 Volume 100, Issue 12, Pages 895–899 (Mi jetpl4499)

This article is cited in 28 papers

CONDENSED MATTER

Anticrossing of Landau levels in HgTe/CdHgTe (013) quantum wells with an inverted band structure

M. S. Zholudevab, F. Teppec, S. V. Morozovab, M. Orlitad, C. Consejoc, S. Ruffenachc, W. Knapc, V. I. Gavrilenkoab, S. A. Dvoretskiie, N. N. Mikhailove

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b N. I. Lobachevski State University of Nizhni Novgorod
c Laboratoire Charles Coulomb, Universite Montpellier II
d Laboratoire National des Champs Magnetiques Intenses, CNRS-UJF-UPS-INSA
e Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The simultaneous splitting of lines of an interband transition and cyclotron resonance in the conduction band has been detected in the absorption spectra of HgTe/CdHgTe quantum wells with an inverted band structure in quantizing magnetic fields. It has been shown that it is due to the absence of an inversion center in the crystal, which results in the interaction between the lower Landau level of the conduction band and the upper Landau level of the valence band.

Received: 31.10.2014
Revised: 14.11.2014

DOI: 10.7868/S0370274X14240072


 English version:
Journal of Experimental and Theoretical Physics Letters, 2014, 100:12, 790–794

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