K. E. Kudryavtsev, D. I. Kryzhkov, L. V. Krasil’nikova, D. V. Shengurov, V. B. Shmagin, B. A. Andreev, Z. F. Krasil'nik, “Absorption cross section for the $^4I_{15/2}\to^4I_{13/2}$ transition of Er$^{3+}$ in Si:Er:O/SOI epitaxial layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2014, Volume 100, Issue 12,Pages 913

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CONDENSED MATTER

Absorption cross section for the $^4I_{15/2}\to^4I_{13/2}$ transition of Er$^{3+}$ in Si:Er:O/SOI epitaxial layers

K. E. Kudryavtsev^ab, D. I. Kryzhkov^ab, L. V. Krasil’nikova^ab, D. V. Shengurov^ab, V. B. Shmagin^ab, B. A. Andreev^ab, Z. F. Krasil'nik^ab

^a N. I. Lobachevski State University of Nizhni Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: Optical losses caused by the interaction of radiation with optically active Er$^{3+}$ ions in epitaxial waveguide structures Si:Er/SOI have been directly measured. The cross section for the $^{4}I_{13/2} \to {}^{4}I_{15/2}$ radiative transition in the Er3+ ion has been estimated as $\sigma_{300\,\text{K}}\sim 8\cdot10^{-19}$ cm$^2$ at $T = 300$ K and $\sigma_{10\,\text{K}}\sim 10^{-17}$ cm$^2$ at $T = 10$ K.

Received: 10.11.2014

DOI: 10.7868/S0370274X14240102