Magnetoresistance of thin films due to weak localization under the variation of the dimensionality induced by the magnetic field and temperature

The magnetoresistance due to the weak localization of electrons for films with thickness comparable with the electron diffusion length during the phase relaxation time of the electron wavefunction or with the magnetic length has been analyzed theoretically and studied experimentally. The expression for the magnetoresistance of thin films at the arbitrary relation between the film thickness and the electron diffusion length during the phase relaxation time of the electron wavefunction has been derived. It has been shown that the derived expression describes well the magnetoresistance of gallium-doped zinc oxide films under conditions of the variation of their effective dimension with respect to weak localization induced by the magnetic field and temperature.