Two-dimensional electrons in (100)-oriented silicon field-effect structures in the region of low concentrations and high mobilities

A comparative analysis of experimental data on electron transport in Si (100) MOSFETs in the region of high mobilities and strong electron-electron interaction is carried out. It is shown that electrons can be described by the model of a noninteracting gas with the renormalized mass and Lande factor, which allows experimentally verifiable predictions.