V. A. Volodin, L. V. Sokolov, “Redshift of the absorption edge in tensile-strained germanium layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2015, Volume 101, Issue 6,Pages <nobr>455

This article is cited in 6 papers

CONDENSED MATTER

Redshift of the absorption edge in tensile-strained germanium layers

V. A. Volodin^ab, L. V. Sokolov^a

^a Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia
^b Novosibirsk State University, Novosibirsk, 630090, Russia

Abstract: Tensile-strained thin Ge films in InGaAs/Ge/InGaAs multilayer heterostructures grown by molecular-beam epitaxy on GaAs (001) substrates are investigated by Raman and optical transmission spectroscopy. Tensile biaxial strains in the films are as large as $1.9$ %. A long-wavelength shift (redshift) of the absorption edge in tensile-strained Ge films is observed. The optical gap decreases to $\sim0.48$ eV.

Received: 04.02.2015
Revised: 12.02.2015

DOI: 10.7868/S0370274X15060120