G. M. Min'kov, A. A. Sherstobitov, A. V. Germanenko, O. E. Rut, S. A. Dvoretskii, N. N. Mikhailov, “Conductance of a lateral <nobr>$p-n$</nobr> junction in two-dimensional HgTe structures with an inverted spectrum: The role of edge states”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2015, Volume 101, Issue 7,Pages <nobr>522

This article is cited in 6 papers

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Conductance of a lateral $p-n$ junction in two-dimensional HgTe structures with an inverted spectrum: The role of edge states

G. M. Min'kov^ab, A. A. Sherstobitov^ba, A. V. Germanenko^b, O. E. Rut^b, S. A. Dvoretskii^c, N. N. Mikhailov^c

^a Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. Kovalevskoi 18, Yekaterinburg, 620137, Russia
^b Ural Federal University, ul. Mira 19, Yekaterinburg, 620000, Russia
^c Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akedemika Lavrent'eva 13, Novosibirsk, 630090, Russia

Abstract: The conductance of a lateral $p-n$ junction in two-dimensional HgTe structures with an inverted spectrum is measured. It is shown that Klein tunneling is rather inefficient in 8- to 10-nm-thick quantum wells and does not hinder the identification of the edge-state contribution to the conductance. The separation of the contributions from the $p-n$ junction and the edge states is possible upon the simultaneous measurement of the resistance of the $p-n$ junction regions in channels with substantially different widths.

Received: 29.01.2015
Revised: 15.02.2015

DOI: 10.7868/S0370274X15070103