Abstract:
We present measurements of resistivity $\rho$ in highly oriented LaNiO$_3$ films grown on LaAlO$_3$ substrates by using a pulsed laser deposition technique. The experimental data are found to follow a universal $\rho (T) \propto T^{3/2}$ dependence for the entire temperature interval ($20\,\text{K}<T<300\,$K). The observed behavior has been attributed to a resonant scattering of electrons on antiferromagnetic fluctuations (with a characteristic energy $\hbar \omega _{sf}\simeq 2.1\,$meV) triggered by spin-density wave propagating through the interface boundary of LaNiO$_3$/LaAlO$_3$ sandwich.