Charge transport mechanism in thin films of amorphous and ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$

The charge transport mechanism in thin amorphous and ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ films has been studied. It has been shown that the transport mechanism in studied materials does not depend on the crystal phase and is phonon-assisted tunneling between traps. The comparison of the experimental current-voltage characteristics of TiN/Hf$_{0.5}$Zr$_{0.5}$O$_2$/Pt structures with the calculated ones provides the trap parameters: thermal energy of $1.25$ eV and the optical energy of $2.5$ eV. The trap concentration has been estimated as ${\sim}10^{19}{-}10^{20}$ cm$^{-3}$.