Analytical theory of the anisotropy of the conduction band in III–V semiconductors in a strong magnetic field

Corrections from the K ³ Dresselhaus term cubic in the wave vector to the energies of the ground and first excited Landau levels in III–V semiconductors have been analyzed. The calculated corrections together with the known corrections from the K ⁴ terms in the Hamiltonian of an electron provide a complete analytical description of the anisotropy of the conduction-band vertex of the III–V semiconductors in an ultraquantum magnetic field. The performed analysis of the experimental data on the splitting of the cyclotron resonance line in GaAs confirms the reality of the anisotropy mechanism under investigation.