I. V. Altukhov, S. E. Dizhur, M. S. Kagan, S. K. Paprotskiy, N. A. Khval'kovskii, A. D. Buravlev, A. P. Vasil'ev, Yu. M. Zadiranov, N. D. Il'inskaya, A. A. Usikova, V. M. Ustinov, “Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2016, Volume 103, Issue 2,Pages <nobr>128

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CONDENSED MATTER

Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices

I. V. Altukhov^a, S. E. Dizhur^a, M. S. Kagan^a, S. K. Paprotskiy^a, N. A. Khval'kovskii^a, A. D. Buravlev^b, A. P. Vasil'ev^b, Yu. M. Zadiranov^b, N. D. Il'inskaya^b, A. A. Usikova^b, V. M. Ustinov^b

^a Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, 125009, Russia
^b Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

Abstract: The miniband conductivity in short-period GaAs/AlAs superlattices with a terahertz cavity has been studied. A stepwise decrease in the current caused by the formation of the electrical domains has been observed in current-voltage characteristics at a certain threshold voltage. It has been found that this threshold voltage changes considerably under the variation of the cavity parameters. The shift of the threshold has been explained by the excitation of high-amplitude oscillations in the cavity.

Received: 11.11.2015
Revised: 09.12.2015

DOI: 10.7868/S0370274X16020090