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JOURNALS // Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki // Archive

Pis'ma v Zh. Èksper. Teoret. Fiz., 2016 Volume 104, Issue 1, Pages 24–25 (Mi jetpl5002)

This article is cited in 2 papers

CONDENSED MATTER

Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion

A. Kononova, S. V. Egorova, V. A. Kostareva, B. R. Semyaginb, V. V. Preobrazhenskiib, M. A. Putyatob, E. A. Emelyanovb, E. V. Deviatova

a Institute of Solid State Physics RAS, 142432 Chernogolovka, Russia
b Institute of Semiconductor Physics, 630090 Novosibirsk, Russia

Abstract: We experimentally investigate transport through the side junction between a niobium superconductor and the mesa edge of a two-dimensional system, realized in an InAs/GaSb double quantum well with band inversion. We demonstrate, that different transport regimes can be achieved by variation of the mesa step. We observe anomalous behavior of Andreev reflection within a finite low-bias interval, which is invariant for both transport regimes. We connect this behavior with the transition from retro-(at low biases) to specular (at high ones) Andreev reflection channels in an InAs/GaSb double quantum well with band inversion.
The article is published in the original.

Received: 26.05.2016

Language: English

DOI: 10.7868/S0370274X16130063


 English version:
Journal of Experimental and Theoretical Physics Letters, 2016, 104:1, 26–31

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