Magnetoplasma excitations and the effect of electron and hole velocity renormalization in free-hanging graphene studied by Raman scattering

The properties of plasma and magnetoplasma excitations in free-hanging graphene have been studied for the first time by Raman scattering. In addition to single-particle excitations associated with transitions between empty Landau levels of electrons and holes, collective plasma and magnetoplasma excitations in the system of electrons (and holes) of various densities have been discovered for the first time. Hybridization of plasma and cyclotron modes corresponding to the Kohn law has been shown to occur in the limit of high filling factors, which allows measuring directly the plasma and cyclotron energies. The dependence of the electron and hole velocities on their density has been investigated via the magnetic-field dependence of the cyclotron energy in free-hanging graphene. The effect of strong renormalization of the electron and hole dispersion relations seen as an increase in the velocity (by 40–50%) with a decrease in the charge-carrier density to 10$^{11}$ cm$^{-2}$ has been discovered. The charge-carrier density dependences of the widths of magnetoplasma resonances in free-hanging graphene and graphene lying on a silicon dioxide surface have been measured and shown to be at least 3.5 and 14.8 meV, respectively.