CONDENSED MATTER

Modulation of band gap by normal strain and an applied electric field in SiC-based heterostructures

M. Luo^a, Y. E. Xu^ab, Y. X. Song<sup>c

a</sup> Department of Electronic Engineering, Shang Hai Jian Qiao University, 201306 Shanghai, China
^b School of Microelectronic of Fudan University, 200433 Shanghai, China
^c Key Laboratory of Polar Materials and Devices, East China Normal University, 200241 Shanghai, China

Received: 24.10.2016
Revised: 08.12.2016

Language: English

DOI: 10.7868/S0370274X17020096

 English version: Journal of Experimental and Theoretical Physics Letters, 2017, 105:2, 114–118

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