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JOURNALS // Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki // Archive

Pis'ma v Zh. Èksper. Teoret. Fiz., 2017 Volume 105, Issue 5, Pages 305–310 (Mi jetpl5212)

This article is cited in 16 papers

CONDENSED MATTER

Splitting of frequencies of optical phonons in tensile-strained germanium layers

V. A. Volodinab, V. A. Timofeeva, A. R. Tuktamyshevba, A. I. Nikiforova

a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
b Novosibirsk State University, Novosibirsk, Russia

Abstract: Tensile-strained germanium films in Ge/GeSn/Si/GeSnSi multilayer heterostructures grown by molecularbeam epitaxy on Si(001) substrates are investigated by Raman spectroscopy. Biaxial tensile strains in the films reach 1.5%, which exceeds values previously obtained for this system. Splitting of frequencies of long-wavelength optical phonons is experimentally observed; i.e., the shift of the frequency of the singlet induced by biaxial tensile strains is larger than the shift of the frequency of the doublet in agreement with calculations. The strain-induced shift of Raman scattering peaks from two-phonon scattering in germanium is also detected.

Received: 16.01.2017
Revised: 30.01.2017

DOI: 10.7868/S0370274X17050101


 English version:
Journal of Experimental and Theoretical Physics Letters, 2017, 105:5, 327–331

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