This article is cited in
6 papers
MISCELLANEOUS
Bifurcations of the Creation of Low-Temperature Maxima of the Tunneling Conductance of a “dirty” $N$-$I$-$N$ Junction
V. Ya. Kirpichenkov,
N. V. Kirprchenkova,
O. I. Lozin,
A. A. Pukhlova South Russian State Polytechnic University, Novocherkassk, Russia
Abstract:
The representation of the tunneling conductance
$G(T)$ of the “dirty” (with low concentrations of the same nonmagnetic impurities in the I layer)
$N$-
$I$-
$N$ junction (where
$N$ is a normal metal and
$I$ is an insulator) in the form of a sum of conductances of random quantum jumpers penetrating the disordered
$I$ layer is obtained in the low-temperature region. It is shown that the axis of the parameter
$\delta=|\varepsilon_0-\varepsilon_{\mathrm{F}}|$ giving the deviation of the energy of
$\varepsilon_0$ the quasi-local electron state on the impurity in the I layer from the Fermi energy of
$\varepsilon_{\mathrm{F}}$ the dirty
$N$-
$I$-
$N$ junction contains a series of bifurcation points, at the transition through each of which (in the direction of the increase in
$\delta$) the number of maxima on the temperature dependence
$G(T)$ increases by unity; i.e., a new maximum is “born” on the curve
$G(T)$. Numerical estimates are given for the characteristic parameters of dirty
$N$-
$I$-
$N$ junctions indicating the possibility of the experimental observation of at least the first of these maxima.
Received: 20.03.2017
Revised: 31.03.2017
DOI:
10.7868/S0370274X17090120