A. G. Zhuravlev, V. S. Khoroshilov, V. L. Alperovich, “Electron emission from Cs/GaAs and GaAs(Cs,О) with positive and negative electron affinity”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2017, Volume 105, Issue 10,Pages <nobr>645

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Electron emission from Cs/GaAs and GaAs(Cs,О) with positive and negative electron affinity

A. G. Zhuravlev^ab, V. S. Khoroshilov^ab, V. L. Alperovich^ab

^a Novosibirsk State University, Novosibirsk, Russia
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia

Abstract: The evolution of probabilities of escape of hot and thermalized electrons from GaAs(001) with adsorbed cesium and oxygen layers to vacuum at the transition from positive to negative effective electron affinity is studied by the photoemission quantum yield spectroscopy. A minimum of the probability of escape of thermalized electrons near zero electron affinity is revealed and explained.

Received: 30.03.2017

DOI: 10.7868/S0370274X17100137