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// Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki
// Archive
Pis'ma v Zh. Èksper. Teoret. Fiz.,
2017
Volume 106,
Issue 1,
Page 51
(Mi jetpl5312)
This article is cited in
2
papers
CONDENSED MATTER
Band gap tuning of Ge/SiC bilayers under an electric field: a density functional study
M. Luo
a
,
Y. E. Xu
b
,
Y. X. Song
c
a
Department of Physics, Shanghai Second Polytechnic University, 201209 Shanghai, China
b
Department of Electronic Engineering, Shang Hai Jian Qiao University, 201306 Shanghai, China
c
Key Laboratory of Polar Materials and Devices, East China Normal University, 200241 Shanghai, China
Received:
05.06.2017
Language:
English
DOI:
10.7868/S0370274X17130100
Fulltext:
PDF file (191 kB)
Cited by
English version:
Journal of Experimental and Theoretical Physics Letters, 2017,
106
:1,
46–50
Bibliographic databases:
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Steklov Math. Inst. of RAS
, 2025