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JOURNALS // Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki // Archive

Pis'ma v Zh. Èksper. Teoret. Fiz., 2017 Volume 106, Issue 8, Pages 528–533 (Mi jetpl5403)

This article is cited in 3 papers

DISCUSSION

On the origin of nonclassical light generation upon resonant excitation of a GaAs semiconductor microcavity

A. A. Demeneva, D. R. Domaretskiia, A. L. Parakhonskiia, M. V. Lebedevb

a Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Russia
b Moscow Institute of Physics and Technology (State University), Dolgoprudnyi, Russia

Abstract: It was shown in JETP Lett. 102, 508 (2015) that the intensity correlation function of the emission from a high-quality-factor semiconductor microcavity under resonant optical pumping exhibits an oscillatory behavior with an unexpectedly long oscillation period and a long decay time, which fall in the nanosecond range. A further investigation demonstrates that the origin of these oscillations is not related to the weak Rabi interaction between long-lived localized exciton states in the quantum well and the electromagnetic field of the microcavity mode. It proves that the semiconductor microcavity plays a secondary role in the observation of nonclassical light: it provides the spectral selection of the modes of the pump laser. We believe that intrinsic instabilities lead to the chaotic excitation of spiking in the laser modes under a constant operating current.

Received: 08.09.2017

DOI: 10.7868/S0370274X17200139


 English version:
Journal of Experimental and Theoretical Physics Letters, 2017, 106:8, 549–554

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