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JOURNALS // Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki // Archive

Pis'ma v Zh. Èksper. Teoret. Fiz., 2017 Volume 106, Issue 11, Pages 712–717 (Mi jetpl5441)

This article is cited in 9 papers

CONDENSED MATTER

Superconductor-insulator transition in NbTiN films

M. V. Burdastykhab, S. V. Postolovaab, T. I. Baturinaab, T. Prosliercd, V. M. Vinokured, A. Yu. Mironovab

a Novosibirsk State University, Novosibirsk, Russia
b Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
c Institut de recherches sur les lois fundamentales de l’univers, Commissariat de l’énergie atomique et aux énergies renouvelables-Saclay, Gif-sur-Yvette, France
d Materials Science Division, Argonne National Laboratory, Argonne, USA
e Computation Institute, University of Chicago, Chicago, USA

Abstract: Experimental results indicating a direct disorder-induced superconductor-insulator transition in NbTiN thin films have been reported. It has been shown that an increase in the resistance per square in the normal state is accompanied by the suppression of the critical temperature of the superconducting transition $T_c$ according to the fermion mechanism of suppression of superconductivity by disorder. At the same time, the temperature of the Berezinskii–Kosterlitz–Thouless transition is completely suppressed at a nonzero critical temperature and, then, the ground state changes to insulating, which is characteristic of the boson model of suppression of superconductivity by disorder. It has been shown that the temperature dependences of the resistance of insulating films follow the Arrhenius activation law.

Received: 02.11.2017

DOI: 10.7868/S0370274X17230114


 English version:
Journal of Experimental and Theoretical Physics Letters, 2017, 106:11, 749–753

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