Effective injection of spins from a ferromagnetic metal to the InSb semiconductor

Conditions for the fabrication of lateral semiconductor spin devices with a high efficiency of spin injection have been revealed. Technological aspects of the formation of magnetic elements of a spin device, its electric contacts, and a thin MgO dielectric layer necessary for the efficient injection of spin-polarized electrons have been considered in detail. The degree of polarization of electrons for InSb about 25% has been obtained for the first time.