This article is cited in 2 papers

OPTICS AND NUCLEAR PHYSICS

Microstructural characterization of V-defects in InGaN/GaN multiquantum wells

H. Wang^a, G. Jin^a, Q. Tan<sup>ba

a</sup> Academy of Electronic Information and Electrical Engineering, Xiangnan University Chenzhou, 423000, China
^b Institute of Physics and Information Science, Hunan Normal University, Changsha, 410081, China

Received: 27.12.2019
Revised: 02.02.2020
Accepted: 02.02.2020

Language: English

DOI: 10.31857/S0370274X20050045

 English version: Journal of Experimental and Theoretical Physics Letters, 2020, 111:5, 264–267

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