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JOURNALS // Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki // Archive

Pis'ma v Zh. Èksper. Teoret. Fiz., 2020 Volume 111, Issue 10, Pages 641–645 (Mi jetpl6169)

This article is cited in 5 papers

OPTICS AND NUCLEAR PHYSICS

Response of a SINIS detector with electron cooling to submillimeter-wave radiation

A. A. Gunbinaab, S. A. Lemzyakovcd, M. A. Tarasove, V. S. Edelmanc, R. A. Yusupove

a Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, 603950 Russia
b Nizhny Novgorod Technical State University named after R.E. Alekseev, Nizhny Novgorod, 603950 Russia
c Kapitza Institute for Physical Problems, Russian Academy of Sciences, Moscow, 119334 Russia
d Moscow Institute for Physics and Technology (National Research University), Dolgoprudnyi, Moscow region, 141701 Russia
e Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, 125009 Russia

Abstract: The response of a detector fabricated on a silicon substrate in the form of a metamaterial that is a $10 \times 10$ matrix of split rings containing superconductor-insulator-normal metal-insulator-superconductor tunnel structures to submillimeter wave radiation has been experimentally studied. At voltages below the superconducting gap, the electron temperature $T_e$ at the substrate temperature $T \sim 0.1$ K is $\sim0.23$ K due to overheating by spurious radiation. At the substrate temperature $T \sim 0.3$ K, the electron temperature is close to the substrate temperature $T_e\approx T$. In both cases, with increasing voltage, $T_e$ decreases due to electron cooling and reaches $0.19$ K at a voltage corresponding to the maximum response. The response at $T = 0.1$ K is greater than that at $T \sim 0.3$ K by a factor of $5$$6$. Thus, cooling of only electrons does not provide the same responsivity as cooling of the detector as a whole.

Received: 29.03.2020
Revised: 16.04.2020
Accepted: 16.04.2020

DOI: 10.31857/S1234567820100018


 English version:
Journal of Experimental and Theoretical Physics Letters, 2020, 111:10, 539–542

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