Magneto-oscillations of the charge of a field-effect transistor that are due to a microwave-induced nonequilibrium electron energy distribution

The observation of microwave-induced changes in the charge of a field effect transistor with a channel formed by a bilayer electron system has confirmed that microwave radiation induces a nonequilibrium electron energy distribution function, which generates magneto-oscillations of the resistance of two-dimensional electron systems. The observed periodicity and beating of magneto-oscillations of the charge have been explained by the redistribution of electrons between the layers, which occurs because of the corresponding nonequilibrium occupation of electronic states.