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JOURNALS // Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki // Archive

Pis'ma v Zh. Èksper. Teoret. Fiz., 2020 Volume 111, Issue 10, Pages 682–688 (Mi jetpl6174)

This article is cited in 5 papers

CONDENSED MATTER

Probing states of a double acceptor in ÑdHgTe heterostructures via optical gating

I. D. Nikolaeva, T. A. Uaman Svetikovaa, V. V. Rumyantsevb, M. S. Zholudevb, D. V. Kozlovb, S. V. Morozovb, S. A. Dvoretskyc, N. N. Mikhailovc, V. I. Gavrilenkob, A. V. Ikonnikova

a Faculty of Physics, Moscow State University, Moscow, 119991 Russia
b Institute for Physics of Microstructures, Branch of the Federal Research Center Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, 603950 Russia
c Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia

Abstract: Photoconductivity spectra in a HgTe/CdHgTe double quantum well with a normal band structure have been studied. Photosensitivity bands associated with the ionization of a mercury vacancy, which is a doubly charged acceptor, have been detected in photoconductivity spectra. The transformation of photoconductivity spectra when the Fermi level moves from the edge of the valence band through the band gap to the conduction band has been revealed using the residual photoconductivity effect. It has been shown that the observed absorption bands are due to the ionization of doubly charged acceptors rather than individual different singly charged states.

Received: 10.04.2020
Revised: 16.04.2020
Accepted: 16.04.2020

DOI: 10.31857/S1234567820100067


 English version:
Journal of Experimental and Theoretical Physics Letters, 2020, 111:10, 575–581

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