Magnetoelectric effect in CoFeB/MgO/CoFeB magnetic tunnel junctions

The possibility of electrical control of the interlayer exchange interaction in CoFeB/MgO/CoFeB tunnel junctions exhibiting magnetoresistance of $\sim200\%$ is studied. It is shown that the increase in the applied voltage from $50$ mV to $1.25$ V leads to a shift of the magnetization curve of the free layer by $10$ Oe at a current density of $\sim10^3$ A/cm$^2$. The discovered effect can be used in the development of energy-efficient random access memory.