H. Wang, Q. Tan, X. He, “Microstructure and formation mechanism of V-defects in the InGaN/GaN multiple quantum wells with a high in content”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2020, Volume 112, Issue 3,Pages <nobr>172

This article is cited in 4 papers

CONDENSED MATTER

Microstructure and formation mechanism of V-defects in the InGaN/GaN multiple quantum wells with a high in content

H. Wang^a, Q. Tan^ba, X. He^a

^a Academy of Electronic Information and Electrical Engineering, Xiangnan University, 423000 Chenzhou, China
^b Institute of Physics and Information Science, Hunan Normal University, 410081 Changsha, China

Received: 02.06.2020
Revised: 19.06.2020
Accepted: 19.06.2020

Language: English

DOI: 10.31857/S1234567820150057