Efficient integration of single-photon emitters in thin InSe films into resonance silicon waveguides

A concept of the optimal design of a silicon waveguide based on optically coupled Mie-resonant nanoantennas for efficient inputting of light from point emitters associated with excitons localized at defects in a thin InSe film is proposed. Numerical calculations demonstrate that the efficiency of coupling between a dipole emitter and a resonant silicon waveguide is four orders of magnitude greater than that for a conventional ridge waveguide.