E. I. Girshova, G. Pozina, A. V. Belonovskii, M. I. Mitrofanov, I. V. Levitskii, G. V. Voznyuk, V. P. Evtikhiev, S. N. Rodin, M. A. Kaliteevskii, “Enhancement of the basal-plane stacking fault emission in GaN planar nanowire microcavity”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2022, Volume 115, Issue 10,Pages <nobr>611–612</nobr>

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Pis'ma v Zh. Èksper. Teoret. Fiz., 2022 Volume 115, Issue 10, Pages 611–612 (Mi jetpl6670)

This article is cited in 1 paper

OPTICS AND NUCLEAR PHYSICS

Enhancement of the basal-plane stacking fault emission in GaN planar nanowire microcavity

E. I. Girshova^a, G. Pozina^b, A. V. Belonovskii^a, M. I. Mitrofanov^cd, I. V. Levitskii^dc, G. V. Voznyuk^a, V. P. Evtikhiev^b, S. N. Rodin^cd, M. A. Kaliteevskii^a

^a ITMO University, 197101 St. Petersburg, Russia
^b Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping, Sweden
^c Ioffe Institute, 194021 St. Petersburg, Russia
^d Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences, 194021 St. Petersburg, Russia

Received: 05.04.2022
Revised: 12.04.2022
Accepted: 13.04.2022

Language: English

DOI: 10.31857/S1234567822100032

English version: Journal of Experimental and Theoretical Physics Letters, 2022, 115:10, 574–580

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© Steklov Math. Inst. of RAS, 2025