Calculation of bound and resonant levels of acceptors in narrow-gap CdHgTe solid solutions

The wavefunctions of an electron in the field of a singly charged acceptor in narrow-gap CdHgTe solid solutions are calculated taking into account the central-cell potential. By approximating the calculation results, an analytical expression is obtained for the energies of the deepest bound and resonant states at various parameters of the central-cell potential and the cadmium content in the solid solution. The dependences obtained can be used to identify acceptor impurities in CdHgTe, in particular, arsenic, as the most promising dopant for $p$-type structures.