Temperature dependence of circularly polarized radiation of an injection semiconductor laser

The temperature dependence of stimulated laser radiation with a high degree of circular polarization in chiral semiconductor nanostructures has been investigated in the temperature range from liquid-helium temperatures to $\sim$ 140 K. Investigations have been performed on electrically pumped semiconductor laser structures based on planar microcavities with GaAs quantum wells inside and a periodic square lattice of a chiral-symmetry photonic crystal, formed as a result of partial etching in the upper Bragg mirror. Developed multimode lasing in the form of very narrow spectral bands with a high degree of circular polarization of radiation (> 70%) up to temperatures of $\sim$ 90 K was observed at maximum values of the pulsed current flowing through the sample.