A. V. Andrianov, A. N. Aleshin, S. N. Abolmasov, E. I. Terukov, E. V. Beregulin, “Generation of terahertz radiation under the femtosecond laser excitation of a multilayer structure based on a-Si:H/a-SiC:H/c-Si”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2022, Volume 116, Issue 12,Pages <nobr>825

This article is cited in 1 paper

OPTICS AND NUCLEAR PHYSICS

Generation of terahertz radiation under the femtosecond laser excitation of a multilayer structure based on a-Si:H/a-SiC:H/c-Si

A. V. Andrianov^a, A. N. Aleshin^a, S. N. Abolmasov^b, E. I. Terukov^acb, E. V. Beregulin^a

^a Ioffe Institute, St. Petersburg, 194021 Russia
^b R&D Center of Thin Film Technologies in Energetics, St. Petersburg, 194064 Russia
^c St. Petersburg State Electrotechnical University LETI, St. Petersburg, 197376 Russia

Abstract: Coherent terahertz radiation has been generated in $p-n$ heterostructures based on a-Si:H/a-SiC:H/c-Si excited by 800-nm femtosecond laser pulses at room temperature. Terahertz radiation is generated when a reverse bias voltage is applied to heterostructures. The properties of the generated terahertz radiation strongly depend on the bias voltage, which reflects the dynamics of nonequilibrium charge carriers produced by femtosecond laser pump in the heterostructure.

Received: 12.10.2022
Revised: 25.10.2022
Accepted: 25.10.2022

DOI: 10.31857/S1234567822240016