S. A. Aseyev, B. N. Mironov, I. V. Kochikov, A. A. Lotin, A. A. Ischenko, E. A. Ryabov, “Ultrathin GeTe crystal in a strong femtosecond laser field: manifestation of a quantum size effect”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2023, Volume 117, Issue 11,Pages <nobr>814

This article is cited in 1 paper

OPTICS AND NUCLEAR PHYSICS

Ultrathin GeTe crystal in a strong femtosecond laser field: manifestation of a quantum size effect

S. A. Aseyev^a, B. N. Mironov^a, I. V. Kochikov^b, A. A. Lotin^c, A. A. Ischenko^d, E. A. Ryabov^a

^a Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow, 108840 Russia
^b Faculty of Physics, Moscow State University, Moscow, 119234 Russia
^c Institute of Problems of Laser and Information Technologies, Federal Scientific Research Centre Crystallography and Photonics, Russian Academy of Sciences, Shatura, Moscow region, 140700 Russia
^d Lomonosov Institute of Fine Chemical Technology, Russian Technological University, Moscow, 119571 Russia

Abstract: The behavior of a thin-film GeTe crystal induced by intense femtosecond laser pulses ($\lambda = 0.8$ $\mu$m) has been studied using a pulsed electron diffractometer. The sample is an annealed 20-nm GeTe film on a copper grid with a carbon coating. It has been found that laser ablation results in the formation of an ultrathin GeTe crystal (assumingly, GeTe monolayer) with a high radiation resistance. Possible reasons for the detected nanosize effect are discussed.

Received: 03.04.2023
Revised: 20.04.2023
Accepted: 20.04.2023

DOI: 10.31857/S1234567823110034