Dependence of resonant light wavefront reversal on polaritons on the optical pump intensity in zinc oxide films

The possibility of resonant light wavefront reversal in an excited semiconductor medium has been demonstrated theoretically and experimentally. Induced light wavefront reversal in the infrared spectral range equal to half the energy of the radiative recombination of polaritons has been detected on epitaxial ZnO films under nitrogen laser pumping at room temperature. Dependences of the intensity of the wavefront reversal signal on the energy of the incident photon and the laser pump intensity have been examined.