OPTICS AND NUCLEAR PHYSICS
Optical spin initialization of nitrogen vacancy centers in a $^{28}$Si-enriched 6H-SiC crystal for quantum technologies
F. F. Murzakhanova,
M. A. Sadovnikovaa,
G. V. Mamina,
D. V. Shurtakovaa,
E. N. Mokhovb,
O. P. Kazarovab,
M. R. Gafurova a Institute of Physics, Kazan Federal University, Kazan, 420008 Russia
b Ioffe Institute, St. Petersburg, 194021 Russia
Abstract:
High-spin defect centers in crystal matrices are used in quantum computing technologies, highly sensitive sensors, and single-photon sources. In this work, optically active nitrogen-vacancy color centers NV
$^-$ in a
$^{28}$Si-enriched (nuclear spin
$I = 0$) 6H-
$^{28}$SiC crystal have been studied using the photoinduced (
$\lambda = 980$ nm) high-frequency (
$94$ GHz,
$3.4$ T) pulsed electron paramagnetic resonance method at a temperature of
$T = 150$ K. Three structurally nonequivalent types of NV
$^-$ centers with axial symmetry have been identified and their spectroscopic parameters have been determined. Long spin–lattice,
${T}_{1} = 1.3$ ms, and spin–spin,
${{T}_{2}} = 59$ $\mu$s, ensemble relaxation times of NV
$^-$ centers with extremely narrow (
$450$ kHz) absorption lines allow highly selective excitation of resonant transitions between sublevels
$m_I$ caused by the weak hyperfine interaction (
$A \approx 1$ MHz) with
$^{14}$N (
$I = 1$) nuclei for the quantum manipulation of the electron spin magnetization.
Received: 01.03.2024
Revised: 13.03.2024
Accepted: 13.03.2024
DOI:
10.31857/S1234567824080032