Growth of silicene by molecular beam epitaxy on CaF$_2$/Si(111) substrates modified by electron irradiation

For the first time, the possibility of producing silicene on CaF$_2$/Si(111) substrates modified by electron irradiation is experimentally demonstrated. It is shown that areas of the planar surface of CaSi$_2$ with hexagonal packing formed under an electron beam can be used as a natural template for the subsequent growth of silicene. Silicon is deposited on such surfaces and the formation of silicene islands is confirmed by atomic force microscopy and Raman spectroscopy.