Local diagnostics of spin defects in irradiated SiC Schottky diodes

The spectra of anticrossing of spin sublevels have been recorded and spin-3/2 color centers have been identified for the first time in commercially available 4H-SiC Schottky diodes irradiated with 0.9-MeV electrons or 15-MeV protons. The effect of the irradiation density on the defect formation has been shown. It has been demonstrated that the increase in the temperature at which proton irradiation is carried out acts as a short-term annealing, leading to a decrease in the concentration of point defects.