A. A. Bykov, I. V. Marchishin, A. K. Bakarov, J.-q. Zhang, S. A. Vitkalov, “Hall breakdown in a modulation-doped GaAs/AlAs heterostructure”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2007, Volume 85, Issue 1,Pages <nobr>69

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CONDENSED MATTER

Hall breakdown in a modulation-doped GaAs/AlAs heterostructure

A. A. Bykov^a, I. V. Marchishin^a, A. K. Bakarov^a, J.-q. Zhang^b, S. A. Vitkalov^b

^a Institute of Semiconductor Physics of SB RAS
^b City College of the City University of New York, Physics Department

Abstract: The effect of dc current I _dc on the electron transport in a GaAs quantum well with AlAs/GaAs superlattice barriers is studied experimentally at a temperature of 4.2 K in magnetic fields up to 2 T. A sharp increase in resistance R _xx is observed in magnetic fields higher than the critical field B _c. The value of B _c is found to decrease with increasing the current I _dc. The phenomenon observed in the experiment is qualitatively explained by the electric breakdown of superlattice barriers under the action of the Hall field.

PACS: 73.23.-b, 73.40.Gk

Received: 07.11.2006
Revised: 30.11.2006