Angelina V. Chernichenko, Dmitry A. Marushchenko, Igor A. Turpanov, Yulia E. Greben'kova, Pavel N. Mel'nikov, “The Magnetooptical Faraday Effect in Ni-Ge Films: the Dependence on the Ge Layers Thickness and the Annealing Regime”, J. Sib. Fed. Univ. Math. Phys., 2009, Volume 2, Issue 3,Pages <nobr>376

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The Magnetooptical Faraday Effect in Ni-Ge Films: the Dependence on the Ge Layers Thickness and the Annealing Regime

Angelina V. Chernichenko^a, Dmitry A. Marushchenko^a, Igor A. Turpanov^a, Yulia E. Greben'kova^b, Pavel N. Mel'nikov^b

^a L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk, Russia
^b Institute of Engineering Physics and Radioelectronics, Siberian Federal University, Krasnoyarsk, Russia

Abstract: The Faraday magnetooptical effect (FE) of bi-layer and multilayer Ni-Ge films and its changes at stepped annealing, as well as the films surface morphology were experimentally investigated. Inverse linear dependence of FE on the intermediate Ge layer thickness in multilayer films, and strong decrease of the saturation field in these films were revealed. The FE increase at the first annealing and gradual decrease at the next annealing were explained by mutual diffusion of the film components.

Keywords: Ni-Ge films, the Faraday effect, the interface of a magnetic metal and a semiconductor.

UDC: 537.622.4

Received: 18.03.2009
Received in revised form: 20.05.2009
Accepted: 10.06.2009